IXTA2N100
Part NoIXTA2N100
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 2A TO263
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusLast Time Buy
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)7Ohm @ 1A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs18 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)825 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature100W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263AA
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6674
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.346 | |
| 10 | 5.2391 | |
| 100 | 5.0787 | |
| 1000 | 4.9183 | |
| 10000 | 4.7045 |
Associated Product
