IXTF200N10T
Part NoIXTF200N10T
ManufacturerIXYS
DescriptionMOSFET N-CH 100V 90A I4PAC
Datasheet
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ECAD Module
Specification
PackageTube
SeriesTrench
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C90A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)7mOhm @ 50A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs152 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)9400 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature156W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeISOPLUS i4-PAC™
SupplierDevicePackagei4-Pac™-5
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6491
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 9.2196 | |
| 10 | 9.0352 | |
| 100 | 8.7586 | |
| 1000 | 8.482 | |
| 10000 | 8.1132 |
Associated Product
