IXTH10P60
Part NoIXTH10P60
ManufacturerIXYS
DescriptionMOSFET P-CH 600V 10A TO247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1Ohm @ 5A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id4700 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds300W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-247 (IXTH)
MountingTypeTO-247-3
SupplierDevicePackage160 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7151
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 11.7111 | |
| 10 | 11.4769 | |
| 100 | 11.1255 | |
| 1000 | 10.7742 | |
| 10000 | 10.3058 |
Associated Product
