IXTH110N10L2
Part NoIXTH110N10L2
ManufacturerIXYS
DescriptionMOSFET N-CH 100V 110A TO247
Datasheet
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ECAD Module
Specification
PackageTube
SeriesLinear L2™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C110A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)18mOhm @ 500mA, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs260 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)10500 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature600W (Tc)
PowerDissipation(Max)-
OperatingTemperatureThrough Hole
MountingTypeTO-247 (IXTH)
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
13195
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 18.8374 | |
| 10 | 18.4607 | |
| 100 | 17.8955 | |
| 1000 | 17.3304 | |
| 10000 | 16.5769 |
Associated Product
