IXTH120N20X4
Part NoIXTH120N20X4
ManufacturerIXYS
DescriptionMOSFET
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C120A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)9.5mOhm @ 60A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs108 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)6100 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature417W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247 (IXTH)
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3574
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 9.027 | |
| 10 | 8.8465 | |
| 100 | 8.5756 | |
| 1000 | 8.3048 | |
| 10000 | 7.9438 |
Associated Product
