IXTH12N100L
Part NoIXTH12N100L
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 12A TO247
Datasheet
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ECAD Module
Specification
PackageTube
SeriesLinear
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)1.3Ohm @ 500mA, 20V
RdsOn(Max)@Id5V @ 250µA
Vgs155 nC @ 20 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2500 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature400W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247 (IXTH)
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7514
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 17.344 | |
| 10 | 16.9971 | |
| 100 | 16.4768 | |
| 1000 | 15.9565 | |
| 10000 | 15.2627 |
Associated Product
