IXTH12N65X2
Part NoIXTH12N65X2
ManufacturerIXYS
DescriptionMOSFET N-CH 650V 12A TO247-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesUltra X2
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)300mOhm @ 6A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs17 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1100 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature180W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247 (IXTH)
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9718
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.786 | |
| 10 | 5.6703 | |
| 100 | 5.4967 | |
| 1000 | 5.3231 | |
| 10000 | 5.0917 |
Associated Product
