IXTH1N100
RoHS

IXTH1N100

Part NoIXTH1N100
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 1.5A TO247
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ECAD Module IXTH1N100
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Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C1.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)11Ohm @ 1A, 10V
RdsOn(Max)@Id4.5V @ 25µA
Vgs23 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)480 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature60W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247 (IXTH)
SupplierDevicePackageTO-247-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 7218
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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