IXTH200N10T
Part NoIXTH200N10T
ManufacturerIXYS
DescriptionMOSFET N-CH 100V 200A TO247
Datasheet
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Specification
PackageTube
SeriesTrench
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C200A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)5.5mOhm @ 50A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs152 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)9400 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature550W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247 (IXTH)
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
14122
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 8.607 | |
10 | 8.4349 | |
100 | 8.1767 | |
1000 | 7.9184 | |
10000 | 7.5742 |