IXTM11N80
RoHS

IXTM11N80

Part NoIXTM11N80
ManufacturerIXYS
DescriptionMOSFET N-CH 800V 11A TO204AA
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ECAD Module IXTM11N80
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Specification
PackageTube
SeriesGigaMOS™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C11A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)950mOhm @ 5.5A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs170 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4500 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature300W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-204AA (IXTM)
SupplierDevicePackageTO-204AA, TO-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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Shipping Information
Shiped FromShenZhen Warehourse
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