IXTM12N100
Part NoIXTM12N100
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 12A TO204AA
Datasheet
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ECAD Module
Specification
PackageTube
SeriesGigaMOS™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.05Ohm @ 6A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs170 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4000 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature300W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-204AA (IXTM)
SupplierDevicePackageTO-204AA, TO-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3595
Pricing
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Associated Product
