IXTP06N120P
RoHS

IXTP06N120P

Part NoIXTP06N120P
ManufacturerIXYS
DescriptionMOSFET N-CH 1200V 600MA TO220AB
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ECAD Module IXTP06N120P
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Specification
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C600mA (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)32Ohm @ 500mA, 10V
RdsOn(Max)@Id4.5V @ 50µA
Vgs13.3 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)270 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature42W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 8747
Pricing
QTY UNIT PRICE EXT PRICE
1 5.019
10 4.9186
100 4.768
1000 4.6175
10000 4.4167
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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