IXTP08N120P
RoHS

IXTP08N120P

Part NoIXTP08N120P
ManufacturerIXYS
DescriptionMOSFET N-CH 1200V 800MA TO220AB
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ECAD Module IXTP08N120P
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Specification
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C800mA (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)25Ohm @ 500mA, 10V
RdsOn(Max)@Id4.5V @ 50µA
Vgs14 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)333 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature50W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 6931
Pricing
QTY UNIT PRICE EXT PRICE
1 2.2528
10 2.2077
100 2.1402
1000 2.0726
10000 1.9825
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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