IXTP1R4N120P
Part NoIXTP1R4N120P
ManufacturerIXYS
DescriptionMOSFET N-CH 1200V 1.4A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C1.4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)13Ohm @ 500mA, 10V
RdsOn(Max)@Id4.5V @ 100µA
Vgs24.8 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)666 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature86W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6872
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.962 | |
| 10 | 5.8428 | |
| 100 | 5.6639 | |
| 1000 | 5.485 | |
| 10000 | 5.2466 |
Associated Product
