IXTP1R4N60P
RoHS

IXTP1R4N60P

Part NoIXTP1R4N60P
ManufacturerIXYS
DescriptionMOSFET N-CH 600V 1.4A TO220AB
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ECAD Module IXTP1R4N60P
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Specification
PackageTube
SeriesPolarHV™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C1.4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)9Ohm @ 700mA, 10V
RdsOn(Max)@Id5.5V @ 25µA
Vgs5.2 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)140 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature50W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 9353
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Shipping Information
Shiped FromShenZhen Warehourse
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Associated Product