IXTP26P10T
Part NoIXTP26P10T
ManufacturerIXYS
DescriptionMOSFET P-CH 100V 26A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
SeriesTrenchP™
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C26A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)90mOhm @ 13A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs52 nC @ 10 V
Vgs(th)(Max)@Id±15V
Vgs(Max)3820 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature150W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8860
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.104 | |
| 10 | 2.0619 | |
| 100 | 1.9988 | |
| 1000 | 1.9357 | |
| 10000 | 1.8515 |
Associated Product
