IXTP4N65X2
Part NoIXTP4N65X2
ManufacturerIXYS
DescriptionMOSFET N-CH 650V 4A TO220
Datasheet
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ECAD Module
Specification
PackageTube
SeriesUltra X2
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C4A (Tc)
DriveVoltage(MaxRdsOn850mOhm @ 2A, 10V
MinRdsOn)5V @ 250µA
RdsOn(Max)@Id8.3 nC @ 10 V
Vgs±30V
Vgs(th)(Max)@Id455 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds80W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-220
MountingTypeTO-220-3
SupplierDevicePackage10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6217
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.2 | |
| 10 | 2.156 | |
| 100 | 2.09 | |
| 1000 | 2.024 | |
| 10000 | 1.936 |
Associated Product
