IXTP64N10L2
RoHS

IXTP64N10L2

Part NoIXTP64N10L2
ManufacturerIXYS
DescriptionMOSFET N-CH 100V 64A TO220AB
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ECAD Module IXTP64N10L2
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Specification
PackageTube
SeriesLinear L2™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C64A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)32mOhm @ 32A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs100 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3620 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature357W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 4701
Pricing
QTY UNIT PRICE EXT PRICE
1 15.394
10 15.0861
100 14.6243
1000 14.1625
10000 13.5467
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product