IXTQ10P50P
Part NoIXTQ10P50P
ManufacturerIXYS
DescriptionMOSFET P-CH 500V 10A TO3P
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPolarP™
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1Ohm @ 5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs50 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2840 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature300W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-3P
SupplierDevicePackageTO-3P-3, SC-65-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6227
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.9065 | |
| 10 | 6.7684 | |
| 100 | 6.5612 | |
| 1000 | 6.354 | |
| 10000 | 6.0777 |
Associated Product
