IXTQ180N10T
Part NoIXTQ180N10T
ManufacturerIXYS
DescriptionMOSFET N-CH 100V 180A TO3P
Datasheet
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ECAD Module
Specification
PackageTube
SeriesTrench
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C180A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)6.4mOhm @ 25A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs151 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)6900 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature480W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-3P
GateCharge(Qg)(Max)@VgsTO-3P-3, SC-65-3
Grade
Qualification
In Stock:
9930
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.9616 | |
| 10 | 5.8424 | |
| 100 | 5.6635 | |
| 1000 | 5.4847 | |
| 10000 | 5.2462 |
Associated Product
