IXTQ18N60P
Part NoIXTQ18N60P
ManufacturerIXYS
DescriptionMOSFET N-CH 600V 18A TO3P
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C18A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)420mOhm @ 9A, 10V
RdsOn(Max)@Id5.5V @ 250µA
Vgs49 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2500 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature360W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-3P
SupplierDevicePackageTO-3P-3, SC-65-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
13831
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.5513 | |
| 10 | 4.4603 | |
| 100 | 4.3237 | |
| 1000 | 4.1872 | |
| 10000 | 4.0051 |
Associated Product
