IXTQ200N06P
Part NoIXTQ200N06P
ManufacturerIXYS
DescriptionMOSFET N-CH 60V 200A TO3P
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPolar
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C200A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)5mOhm @ 400A, 15V
RdsOn(Max)@Id5V @ 250µA
Vgs200 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)5400 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature714W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-3P
SupplierDevicePackageTO-3P-3, SC-65-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
8278
Pricing
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Associated Product
