IXTQ200N10T
Part NoIXTQ200N10T
ManufacturerIXYS
DescriptionMOSFET N-CH 100V 200A TO3P
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
SeriesTrench
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C200A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)5.5mOhm @ 50A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs152 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)9400 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature550W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-3P
GateCharge(Qg)(Max)@VgsTO-3P-3, SC-65-3
Grade
Qualification
In Stock:
16215
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.9024 | |
| 10 | 6.7644 | |
| 100 | 6.5573 | |
| 1000 | 6.3502 | |
| 10000 | 6.0741 |
Associated Product
)
