IXTQ52N30P

IXTQ52N30P

Part NoIXTQ52N30P
ManufacturerIXYS
DescriptionMOSFET N-CH 300V 52A TO3P
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ECAD Module IXTQ52N30P
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Specification
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)300 V
Current-ContinuousDrain(Id)@25°C52A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)66mOhm @ 26A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs110 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3490 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature400W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-3P
GateCharge(Qg)(Max)@VgsTO-3P-3, SC-65-3
Grade
Qualification
In Stock: 14132
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 5.9224
10 5.804
100 5.6263
1000 5.4486
10000 5.2117
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product