IXTT10N100D2
Part NoIXTT10N100D2
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 10A TO268
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDepletion
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.5Ohm @ 5A, 10V
RdsOn(Max)@Id-
Vgs200 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)5320 pF @ 25 V
InputCapacitance(Ciss)(Max)@VdsDepletion Mode
FETFeature695W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-268AA
SupplierDevicePackageTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5920
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 13.6325 | |
| 10 | 13.3598 | |
| 100 | 12.9509 | |
| 1000 | 12.5419 | |
| 10000 | 11.9966 |
Associated Product
