IXTT170N10P
Part NoIXTT170N10P
ManufacturerIXYS
DescriptionMOSFET N-CH 100V 170A TO268
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C170A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)9mOhm @ 500mA, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs198 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)6000 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature715W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CaseTO-268AA
GateCharge(Qg)(Max)@VgsTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Grade
Qualification
In Stock:
4516
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 11.6032 | |
| 10 | 11.3711 | |
| 100 | 11.023 | |
| 1000 | 10.6749 | |
| 10000 | 10.2108 |
Associated Product
