IXTT3N200P3HV
Part NoIXTT3N200P3HV
ManufacturerIXYS
DescriptionMOSFET N-CH 2000V 3A TO268
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPolar P3™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)2000 V
Current-ContinuousDrain(Id)@25°C3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)8Ohm @ 1.5A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs70 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1860 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature520W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-268HV (IXTT)
SupplierDevicePackageTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4828
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 49.302 | |
| 10 | 48.316 | |
| 100 | 46.8369 | |
| 1000 | 45.3578 | |
| 10000 | 43.3858 |
Associated Product
