IXTY08N100D2
Part NoIXTY08N100D2
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 800MA TO252
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDepletion
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C800mA (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)21Ohm @ 400mA, 0V
RdsOn(Max)@Id-
Vgs±20V
Vgs(th)(Max)@Id325 pF @ 25 V
Vgs(Max)Depletion Mode
InputCapacitance(Ciss)(Max)@Vds60W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperatureTO-252AA
MountingTypeTO-252-3, DPak (2 Leads + Tab), SC-63
SupplierDevicePackage14.6 nC @ 5 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9360
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.3321 | |
| 10 | 3.2655 | |
| 100 | 3.1655 | |
| 1000 | 3.0655 | |
| 10000 | 2.9322 |
Associated Product
