IXTY1N80P
Part NoIXTY1N80P
ManufacturerIXYS
DescriptionMOSFET N-CH 800V 1A TO252
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C1A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)14Ohm @ 500mA, 10V
RdsOn(Max)@Id4V @ 50µA
Vgs9 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)250 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature42W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-252AA
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9250
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.764 | |
| 10 | 1.7287 | |
| 100 | 1.6758 | |
| 1000 | 1.6229 | |
| 10000 | 1.5523 |
Associated Product
