ICE10N60
Part NoICE10N60
ManufacturerIceMOS Technology
DescriptionSuperjunction MOSFET
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)330mOhm @ 5A, 10V
RdsOn(Max)@Id3.9V @ 250µA
Vgs43 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1250 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature95W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3115
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.0886 | |
| 10 | 2.0468 | |
| 100 | 1.9842 | |
| 1000 | 1.9215 | |
| 10000 | 1.838 |
Associated Product
