ICE11N70
Part NoICE11N70
ManufacturerIceMOS Technology
DescriptionSuperjunction MOSFET
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)700 V
Current-ContinuousDrain(Id)@25°C11A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)25mOhm @ 5.5A, 10V
RdsOn(Max)@Id3.5V @ 250µA
Vgs85 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2750 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature108W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
22633
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.9754 | |
| 10 | 2.9159 | |
| 100 | 2.8266 | |
| 1000 | 2.7374 | |
| 10000 | 2.6184 |
Associated Product
