ICE19N60L
Part NoICE19N60L
ManufacturerIceMOS Technology
DescriptionSuperjunction MOSFET
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C19A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)220mOhm @ 9.5A, 10V
RdsOn(Max)@Id3.9V @ 250µA
Vgs59 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2064 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature236W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/Case4-DFN (8x8)
GateCharge(Qg)(Max)@Vgs4-PowerTSFN
Grade
Qualification
In Stock:
15934
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.356 | |
| 10 | 2.3089 | |
| 100 | 2.2382 | |
| 1000 | 2.1675 | |
| 10000 | 2.0733 |
Associated Product
