ICE35N60W
RoHS

ICE35N60W

Part NoICE35N60W
ManufacturerIceMOS Technology
DescriptionSuperjunction MOSFET
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ECAD Module ICE35N60W
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Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C35A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)68mOhm @ 18A, 10V
RdsOn(Max)@Id3.9V @ 250µA
Vgs189 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds231W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-247
MountingTypeTO-247-3
SupplierDevicePackage6090 pF @ 25 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 3050
Pricing
QTY UNIT PRICE EXT PRICE
1 6.5072
10 6.3771
100 6.1818
1000 5.9866
10000 5.7263
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product