BSP296L6327
Part NoBSP296L6327
ManufacturerInfineon
DescriptionPower Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Height1.8 mm
Fall Time7.9 ns
Lead FreeLead Free
Rise Time7.9 ns
REACH SVHCNo SVHC
Rds On Max700 mΩ
Case/PackageSOT-223-4
Current Rating24 A
Number of Pins3
Input Capacitance364 pF
Power Dissipation1.79 W
Threshold Voltage1.4 V
Number of Channels1
Number of Elements1
Turn-On Delay Time5.2 ns
Radiation HardeningNo
Turn-Off Delay Time37.4 ns
Voltage Rating (DC)100 V
Max Power Dissipation1.79 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance430 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)1.1 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)100 V
Manufacturer Package IdentifierPG-SOT223-4
Drain to Source Breakdown Voltage100 V
In Stock:
2857
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 170.12 | |
| 10 | 166.7176 | |
| 100 | 161.614 | |
| 1000 | 156.5104 | |
| 10000 | 149.7056 |
Associated Product
74LVCH162244ADG
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