IPB26CN10NG
RoHS

IPB26CN10NG

Part NoIPB26CN10NG
ManufacturerInfineon
DescriptionPower Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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ECAD Module IPB26CN10NG
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Specification
RoHSCompliant
MountSurface Mount
Fall Time3 ns
Rise Time4 ns
Rds On Max26 mΩ
Case/PackageTO-263
Number of Pins3
Input Capacitance2.07 nF
Power Dissipation71 W
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time13 ns
Element ConfigurationSingle
Max Power Dissipation71 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance26 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)35 A
Drain to Source Voltage (Vdss)100 V
Drain to Source Breakdown Voltage100 V
In Stock: 17117
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product