IPD80R1K0CEATMA1
Part NoIPD80R1K0CEATMA1
ManufacturerInfineon
DescriptionMOSFET N-CH 800V 5.7A TO252-3
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Weight3.949996 g
Fall Time8 ns
Lead FreeLead Free
PackagingTape & Reel
Rise Time15 ns
REACH SVHCNo SVHC
Rds On Max950 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTO-252-3
Number of Pins3
Lifecycle StatusProduction (Last Updated: 2 years ago)
Package Quantity2500
Input Capacitance785 pF
Power Dissipation83 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time25 ns
On-State Resistance950 mΩ
Turn-Off Delay Time72 ns
Element ConfigurationSingle
Max Power Dissipation83 W
Max Dual Supply Voltage800 V
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance800 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)5.7 A
Drain to Source Voltage (Vdss)800 V
Drain to Source Breakdown Voltage800 V
In Stock:
16074
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.395 | |
| 10 | 1.3671 | |
| 100 | 1.3253 | |
| 1000 | 1.2834 | |
| 10000 | 1.2276 |
Associated Product
