IPI60R099CPA
Part NoIPI60R099CPA
ManufacturerInfineon
DescriptionPower Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountThrough Hole
Rise Time5 ns
Rds On Max105 mΩ
Case/PackageTO-262-3
Lifecycle StatusProduction (Last Updated: 2 years ago)
Package Quantity500
Input Capacitance2.8 nF
Power Dissipation255 W
Turn-On Delay Time10 ns
On-State Resistance105 mΩ
Turn-Off Delay Time60 ns
Element ConfigurationSingle
Max Power Dissipation255 W
Max Operating Temperature150 °C
Min Operating Temperature-40 °C
Drain to Source Resistance105 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)31 A
Drain to Source Voltage (Vdss)600 V
Drain to Source Breakdown Voltage600 V
In Stock:
14357
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.14 | |
| 10 | 5.0372 | |
| 100 | 4.883 | |
| 1000 | 4.7288 | |
| 10000 | 4.5232 |
Associated Product
