IPU60R1K4C6BKMA1
Part NoIPU60R1K4C6BKMA1
ManufacturerInfineon
DescriptionMOSFET N-CH 600V 3.2A TO251-3
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountThrough Hole
Fall Time20 ns
Rise Time7 ns
Rds On Max1.4 Ω
Case/PackageTO-251
Lifecycle StatusObsolete (Last Updated: 2 years ago)
Package Quantity1500
Input Capacitance200 pF
Power Dissipation28.4 W
Number of Elements1
On-State Resistance1.4 Ω
Turn-Off Delay Time40 ns
Max Power Dissipation28.4 W
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance1.4 Ω
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)3.2 A
Drain to Source Voltage (Vdss)600 V
Drain to Source Breakdown Voltage650 V
In Stock:
5957
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.32 | |
| 10 | 0.3136 | |
| 100 | 0.304 | |
| 1000 | 0.2944 | |
| 10000 | 0.2816 |
Associated Product
