IRFB5615PBF
Part NoIRFB5615PBF
ManufacturerInfineon
DescriptionMOSFET N-CH 150V 35A TO220AB
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountThrough Hole
Width4.826 mm
Height9.02 mm
Length10.668 mm
Fall Time13.2 ns
Lead FreeLead Free
Rise Time23.1 ns
REACH SVHCNo SVHC
Rds On Max39 mΩ
Resistance39 MΩ
Schedule B8541290080|8541290080|8541290080|8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs3 V
Case/PackageTO-220AB
Recovery Time120 ns
Number of Pins3
Lifecycle StatusProduction (Last Updated: 2 years ago)
Package Quantity1000
Input Capacitance1.75 nF
Power Dissipation144 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time8.9 ns
On-State Resistance39 mΩ
Turn-Off Delay Time17.2 ns
Element ConfigurationSingle
Max Power Dissipation144 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance32 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)35 A
Max Junction Temperature (Tj)175 °C
Drain to Source Voltage (Vdss)150 V
Drain to Source Breakdown Voltage150 V
In Stock:
38356
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.9176 | |
| 10 | 1.8792 | |
| 100 | 1.8217 | |
| 1000 | 1.7642 | |
| 10000 | 1.6875 |
Associated Product
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