IRFN350
RoHS

IRFN350

Part NoIRFN350
ManufacturerInfineon
DescriptionPower Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
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ECAD Module IRFN350
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Specification
RoHSNon-Compliant
MountSurface Mount
Lead FreeContains Lead
PackagingBulk
Schedule B8541290080
Number of Pins3
Lifecycle StatusProduction (Last Updated: 2 years ago)
Power Dissipation150 W
On-State Resistance300 mΩ
Radiation HardeningNo
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance315 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)9 A
Drain to Source Voltage (Vdss)400 V
Drain to Source Breakdown Voltage400 V
In Stock: 4269
Pricing
QTY UNIT PRICE EXT PRICE
1 118.44
10 116.0712
100 112.518
1000 108.9648
10000 104.2272
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product