IRLU3636PBF
RoHS

IRLU3636PBF

Part NoIRLU3636PBF
ManufacturerInfineon
DescriptionMOSFET N-CH 60V 50A IPAK
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ECAD Module IRLU3636PBF
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Specification
RoHSCompliant
MountThrough Hole
Width2.3876 mm
Height6.223 mm
Length6.7056 mm
Fall Time96 ns
Rise Time216 ns
REACH SVHCNo SVHC
Rds On Max6.8 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
Nominal Vgs2.5 V
Case/PackageTO-251-3
Number of Pins3
Lifecycle StatusProduction (Last Updated: 2 years ago)
Package Quantity3000
Input Capacitance3.779 nF
Power Dissipation143 W
Number of Channels1
Number of Elements1
Turn-On Delay Time45 ns
On-State Resistance6.8 mΩ
Radiation HardeningNo
Turn-Off Delay Time43 ns
Element ConfigurationSingle
Max Power Dissipation143 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance8.3 mΩ
Gate to Source Voltage (Vgs)16 V
Continuous Drain Current (ID)99 A
Max Junction Temperature (Tj)175 °C
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V
In Stock: 18229
Pricing
QTY UNIT PRICE EXT PRICE
1 1.0201
10 0.9997
100 0.9691
1000 0.9385
10000 0.8977
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product