AIMBG75R027M1HXTMA1
RoHS

AIMBG75R027M1HXTMA1

Part NoAIMBG75R027M1HXTMA1
ManufacturerInfineon Technologies
DescriptionAIMBG75R027M1HXTMA1
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ECAD Module AIMBG75R027M1HXTMA1
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesCoolSiC™
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)750 V
Current - Continuous Drain (Id) @ 25°C64A (Tj)
Drive Voltage (Max Rds On, Min Rds On)15V, 20V
Rds On (Max) @ Id, Vgs25mOhm @ 24.5A, 20V
Vgs(th) (Max) @ Id5.6V @ 8.8mA
Gate Charge (Qg) (Max) @ Vgs49 nC @ 18 V
Vgs (Max)+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds1668 pF @ 500 V
FET Feature-
Power Dissipation (Max)273W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
GradeAutomotive
QualificationAEC-Q101
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
In Stock: 2648
Pricing
QTY UNIT PRICE EXT PRICE
1 15.64
10 15.327
100 14.86
1000 14.39
10000 13.76
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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