Specification
Collector-Emitter Breakdown Voltage (Vceo)4.5V
Power Dissipation (Pd)250mW
Collector Current (Ic)80mA
DC Current Gain (hFE@Ic,Vce)110@20mA,3.5V
Transition Frequency (fT)30GHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)-
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)
In Stock:
14857
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.1865 | |
10 | 0.1828 | |
100 | 0.1772 | |
1000 | 0.1716 | |
10000 | 0.1641 |