BUZ111S
Part NoBUZ111S
ManufacturerInfineon
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesSIPMOS®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)55 V
Current-ContinuousDrain(Id)@25°C80A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)8mOhm @ 80A, 10V
RdsOn(Max)@Id4V @ 240µA
Vgs185 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4500 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature300W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CasePG-TO220-3-1
GateCharge(Qg)(Max)@VgsTO-220-3
Grade
Qualification
In Stock:
16551
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8075 | |
| 10 | 0.7913 | |
| 100 | 0.7671 | |
| 1000 | 0.7429 | |
| 10000 | 0.7106 |
Associated Product
