BUZ32H3045AATMA1
Part NoBUZ32H3045AATMA1
ManufacturerInfineon
DescriptionMOSFET N-CH 200V 9.5A TO263-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesSIPMOS®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C9.5A (Tc)
DriveVoltage(MaxRdsOn400mOhm @ 6A, 10V
MinRdsOn)4V @ 1mA
RdsOn(Max)@Id530 pF @ 25 V
Vgs-
Vgs(th)(Max)@Id75W (Tc)
Vgs(Max)-55°C ~ 150°C (TJ)
InputCapacitance(Ciss)(Max)@VdsSurface Mount
FETFeaturePG-TO263-3-2
PowerDissipation(Max)TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
OperatingTemperature10V
MountingType±20V
SupplierDevicePackage-
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
7369
Pricing
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Associated Product
