F411MR12W2M1B76BOMA1
RoHS

F411MR12W2M1B76BOMA1

Part NoF411MR12W2M1B76BOMA1
ManufacturerInfineon
DescriptionSIC 4N-CH 1200V AG-EASY1B-2
Datasheet Download Now!
ECAD Module F411MR12W2M1B76BOMA1
Get Quotation Now!
Specification
PackageTray
SeriesEasyPACK™ CoolSiC™
ProductStatusObsolete
TechnologySilicon Carbide (SiC)
Configuration-
FETFeature4 N-Channel (Full Bridge)
DraintoSourceVoltage(Vdss)1200V (1.2kV)
Current-ContinuousDrain(Id)@25°C100A (Tj)
RdsOn(Max)@Id11.3mOhm @ 100A, 15V
Vgs5.55V @ 40mA
Vgs(th)(Max)@Id248nC @ 15V
GateCharge(Qg)(Max)@Vgs7360pF @ 800V
InputCapacitance(Ciss)(Max)@Vds-
Power-Max-40°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeModule
Package/CaseAG-EASY1B-2
SupplierDevicePackage-
Grade-
Qualification
In Stock: 2922
Pricing
QTY UNIT PRICE EXT PRICE
1Get latest price!-
10Get latest price!-
100Get latest price!-
1000Get latest price!-
10000Get latest price!-
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
TSM1NB60CH
TSM1NB60CH
Taiwan Semiconductor
600V, 1A, SINGLE N-CHANNEL POWER
IXFK80N50Q3
IXFK80N50Q3
IXYS
MOSFET N-CH 500V 80A TO264AA
SI3586DV-T1-E3
SI3586DV-T1-E3
Vishay Siliconix
MOSFET N/P-CH 20V 2.9A 6TSOP
STP6N60M2
STP6N60M2
STMicroelectronics
MOSFET N-CH 600V 4.5A TO220
MSC080SMA120S
MSC080SMA120S
Microchip
SICFET N-CH 1200V 35A D3PAK
DMP1007UCB9-7
DMP1007UCB9-7
Diodes Inc.
MOSFET P-CH 8V 13.2A U-WLB1515-9
IRF1324PBF
IRF1324PBF
Infineon
MOSFET N-CH 24V 195A TO220AB