FF6MR12W2M1HPB11BPSA1
Part NoFF6MR12W2M1HPB11BPSA1
ManufacturerInfineon
DescriptionSIC 2N-CH 1200V 200A MODULE
Datasheet
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ECAD Module
Specification
PackageTray
SeriesHEXFET®
ProductStatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel
FETFeatureSilicon Carbide (SiC)
DraintoSourceVoltage(Vdss)1200V
Current-ContinuousDrain(Id)@25°C200A (Tj)
RdsOn(Max)@Id5.63mOhm @ 200A, 15V
Vgs5.55V @ 80mA
Vgs(th)(Max)@Id496nC @ 15V
GateCharge(Qg)(Max)@Vgs14700pF @ 800V
InputCapacitance(Ciss)(Max)@Vds-
Power-Max-40°C ~ 150°C (TJ)
OperatingTemperatureModule
MountingTypeModule
Package/CaseChassis Mount
SupplierDevicePackage-
Grade-
Qualification
In Stock:
13632
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 201.8007 | |
| 10 | 197.7647 | |
| 100 | 191.7107 | |
| 1000 | 185.6566 | |
| 10000 | 177.5846 |
Associated Product
