FF7MR12W1M1HB17BPSA1
Part NoFF7MR12W1M1HB17BPSA1
ManufacturerInfineon Technologies
DescriptionEASY STANDARD
Datasheet
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Specification
PackageTray
SeriesCoolSiC™
Product StatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C105A (Tj)
Rds On (Max) @ Id, Vgs5.8mOhm @ 120A, 18V
Vgs(th) (Max) @ Id5.15V @ 56mA
Gate Charge (Qg) (Max) @ Vgs400nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds12100pF @ 800V
Power - Max20mW
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageAG-EASY1B
Grade-
Qualification-
In Stock:
24
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 165.12 | |
10 | 161.818 | |
100 | 156.86 | |
1000 | 151.91 | |
10000 | 145.31 |