FF7MR12W1M1HB17BPSA1
RoHS

FF7MR12W1M1HB17BPSA1

Part NoFF7MR12W1M1HB17BPSA1
ManufacturerInfineon Technologies
DescriptionEASY STANDARD
Datasheet Download Now!
ECAD Module FF7MR12W1M1HB17BPSA1
Get Quotation Now!
Specification
PackageTray
SeriesCoolSiC™
Product StatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C105A (Tj)
Rds On (Max) @ Id, Vgs5.8mOhm @ 120A, 18V
Vgs(th) (Max) @ Id5.15V @ 56mA
Gate Charge (Qg) (Max) @ Vgs400nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds12100pF @ 800V
Power - Max20mW
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageAG-EASY1B
Grade-
Qualification-
In Stock: 24
Pricing
QTY UNIT PRICE EXT PRICE
1 165.12
10 161.818
100 156.86
1000 151.91
10000 145.31
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
HUF75637S3ST
HUF75637S3ST
onsemi
MOSFET N-CH 100V 44A D2PAK
TSM2N7002AKCX RFG
TSM2N7002AKCX RFG
Taiwan Semiconductor
60V, 0.3A, SINGLE N-CHANNEL POWE
SIS4608DN-T1-GE3
SIS4608DN-T1-GE3
Vishay Siliconix
N-CHANNEL 60 V (D-S) MOSFET POWE
IRF7460PBF
IRF7460PBF
Infineon
MOSFET N-CH 20V 12A 8SO
IXFX26N90
IXFX26N90
IXYS
MOSFET N-CH 900V 26A PLUS 247
FDD3510H
FDD3510H
onsemi
MOSFET N/P-CH 80V 4.3A TO252
MSC080SMA120SDT/R
MSC080SMA120SDT/R
Microchip Technology
MOSFET SIC 1200 V 80 MOHM TO-263