IMBG120R090M1HXTMA1
Part NoIMBG120R090M1HXTMA1
ManufacturerInfineon
DescriptionSICFET N-CH 1.2KV 26A TO263
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesCoolSiC™
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C26A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)125mOhm @ 8.5A, 18V
RdsOn(Max)@Id5.7V @ 3.7mA
Vgs23 nC @ 18 V
Vgs(th)(Max)@Id+18V, -15V
Vgs(Max)763 pF @ 800 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature136W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePG-TO263-7-12
SupplierDevicePackageTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
4920
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 9.963 | |
| 10 | 9.7637 | |
| 100 | 9.4649 | |
| 1000 | 9.166 | |
| 10000 | 8.7674 |
Associated Product
