IMBG65R007M2HXTMA1
RoHS

IMBG65R007M2HXTMA1

Part NoIMBG65R007M2HXTMA1
ManufacturerInfineon Technologies
DescriptionSICFET N-CH 650V 238A TO263-7
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ECAD Module IMBG65R007M2HXTMA1
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesCoolSiC™ Gen 2
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C238A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 20V
Rds On (Max) @ Id, Vgs8.5mOhm @ 146.3A, 18V
Vgs(th) (Max) @ Id5.6V @ 2.97mA
Gate Charge (Qg) (Max) @ Vgs179 nC @ 18 V
Vgs (Max)+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds6359 pF @ 400 V
FET Feature-
Power Dissipation (Max)789W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Grade-
Qualification-
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-12
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
In Stock: 239
Pricing
QTY UNIT PRICE EXT PRICE
1 38.07
10 37.309
100 36.17
1000 35.02
10000 33.5
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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